Facilities

Research Infrastructure used by the group

MG 6482

The Nano4NPS group uses the following facilities:

a) Si processing infrastructure. This is an Institute facility used by all researchers. It is run by a group of specialized technicians, but access is also given to trained post- doctoral scientists and PhD students. As Institute Director in the years 1997-2009, the group leader Androula Nassiopoulou contributed substantially to the development of this infrastructure.

b) An advanced electrical characterization infrastructure, that is also a common Institute facility.

c) An electrochemistry lab developed and run by the group.

d) An optical characterization lab developed and run by the group.

The full list of equipment available is summarized in the table below. The techniques and competences of the group are also given on the right column of the table.

PROCESSING

Main Equipments

Techniques/Competences

Silicon processing laboratory in a clean room area of 500 m2, equipped with the following:

E-Beam tool for electron beam lithograpgy by Vistec
4 laminar flow chemical benches
7 horizontal hot-wall furnace tubes
2 horizontal LPCVD tubes for nitride, oxide (TEOS), polysilicon
1 horizontal LPCVD tube for LTO
Ion Implanter (EATON medium current, 200 KeV)
Optical lithography systems (resolution down to 0,6 μm)
Reactive ion Etcher
Metallization equipment (thermal, e-gun evaporation, sputtering)
Process inspection equipment

Processing equipment not in clean room:

High Density Plasma Etcher
Different thin film deposition systems (Sputtering, MOCVD)

Electrochemistry lab equipped with:

Chemical bench
Electrochemical cells
Voltage sources, current sources, multimeters
Thermal and Cooling stages
Thermocontrollers

Micro and Nanofabrication

Nanopatterning technologies
Plasma etching
Growth of metals and dielectrics
Growth of polycrystalline and nanocrystalline Si
Growth of Si nanostructures embedded in a dielectric matrix, ordering of nanostructures
Fabrication of MOS capacitors and MOSFETs
Nanocrystal non-volatile memories
Micromachining, sensor fabrication, microfluidics
Molecular materials and devices
Thin film devices
Thin films by electrochemistry (porous Si, porous anodic alumina, electrochemical metal deposition)
Si nanowires by metal-assisted chemical etching

CHARACTERIZATION

Main Equipments

Techniques/Competences

Electrical

Several probe stations

HP measuring systems
Keithley measuring equipment (230, 220, 617, 195A, 6517A)
Oxfordoptistat cryostat for temperatures in the range 4.2-320K
Wafer level cryogenic measurements (Janis probe station)
RF - Cascade MicrotechSummit9101 Analytical Probe Station
RF - Anritsu 37269D Vector Network Analyzer 40MHz-40GH

Morphology/structural

Leo 440 SEM with Elphy/Raith e-beam lithography attachment
AFM/STM (Veeco CP-II,NT-MDT)
Stylus profilometer model XP-2 of Ambios Technology

Testing equipment

Systems for testing of gas flow, gas pressure, acceleration, humidity sensors, biosensors and systems, microfluidics testing etc.

Optical

Jobin Yvon spectrometer,wavelengths 300-1600nm
Ar+ laser
HeCd 325 nm laser
UV lamp with monochromator
Oxford optistat cryostat, 4.2-320K
FTIR: Bruker, Tensor 27

Characterization of dielectrics and MIS devices

Admittance measurements (1Hz up to 1MHz, 25-150°C)
I-V measurements (2 up to 4-terminal devices, 25-150°C)
Charge-to-breakdown measurements
Bias-Temperature-Stress measurements
Hot-carrier stress measurements
Bias-Temperature-Stress measurements

RF measurements up to 40 GHz

Optical characterization

Absorption measurements, wavelength rangeUV-VIS-IR
Photoluminescence (PL)
Laser excitation: 325 nm, 457.8nm, 488nm, 514.5nm
Spectrometer: 350nm-1600nm
Electroluminescence (EL): 350nm-1600nm
Photocurrent-photovoltage (UV-VIS)
FTIR
Solar cell measurements

Characterization of sensors

Gas sensors
Flow sensors

MODELLING

Main Equipments	Techniques/Competences
SILVACO tools for process and device modeling (Athina and Atlas) Coventorware MATLAB-FEMlab HFFS	Process and device modeling RF modeling using HFFS