Facilities

 

Research Infrastructure used by the group

 

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The Nano4NPS group uses the following facilities:

a) Si processing infrastructure. This is an Institute facility used by all researchers. It is run by a group of specialized technicians, but access is also given to trained post- doctoral scientists and PhD students. As Institute Director in the years 1997-2009, the group leader Androula Nassiopoulou contributed substantially to the development of this infrastructure.

b) An advanced electrical characterization infrastructure, that is also a common Institute facility.

c) An electrochemistry lab developed and run by the group.

d) An optical characterization lab developed and run by the group.

The full list of equipment available is summarized in the table below. The techniques and competences of the group are also given on the right column of the table.

 
 
 
 
PROCESSING
 

Main Equipments

Techniques/Competences

Silicon processing laboratory in a clean room area of 500 m2, equipped with the  following:
  • E-Beam tool for electron beam lithograpgy by Vistec
  • 4 laminar flow chemical benches
  • 7 horizontal hot-wall furnace tubes
  • 2 horizontal LPCVD tubes for nitride, oxide (TEOS), polysilicon
  • 1 horizontal LPCVD tube for LTO
  • Ion Implanter (EATON medium current, 200 KeV)
  • Optical lithography systems (resolution down to 0,6 μm)
  • Reactive ion Etcher
  • Metallization equipment (thermal, e-gun evaporation, sputtering)
  • Process inspection equipment
Processing equipment not in clean room:
  • High Density Plasma Etcher
  • Different thin film deposition systems  (Sputtering, MOCVD)
Electrochemistry lab equipped with:
  • Chemical bench
  • Electrochemical cells
  • Voltage sources, current sources, multimeters
  • Thermal and Cooling stages
  • Thermocontrollers
Micro and Nanofabrication
  • Nanopatterning technologies
  • Plasma etching
  • Growth of metals and dielectrics
  • Growth of polycrystalline and nanocrystalline Si
  • Growth of Si nanostructures embedded in a dielectric matrix, ordering of nanostructures
  • Fabrication of MOS capacitors and MOSFETs
  • Nanocrystal non-volatile memories
  • Micromachining, sensor fabrication, microfluidics
  • Molecular materials and devices
  • Thin film devices
  • Thin films by electrochemistry (porous Si, porous anodic alumina, electrochemical metal deposition)
  • Si nanowires by metal-assisted chemical etching

 

 
CHARACTERIZATION

Main Equipments

Techniques/Competences

Electrical

Several probe stations      

  • HP measuring systems
  • Keithley measuring equipment (230, 220, 617, 195A, 6517A)  
  • Oxfordoptistat cryostat for temperatures in the range 4.2-320K
  • Wafer level cryogenic measurements (Janis probe station)
  • RF - Cascade MicrotechSummit9101 Analytical Probe Station
  • RF - Anritsu 37269D Vector Network Analyzer 40MHz-40GH
Morphology/structural
  • Leo 440 SEM with Elphy/Raith e-beam lithography attachment
  • AFM/STM (Veeco CP-II,NT-MDT)
  • Stylus profilometer model XP-2 of Ambios Technology
Testing equipment

Systems for testing of gas flow, gas pressure, acceleration, humidity sensors, biosensors and systems, microfluidics testing etc.

Optical
  • Jobin Yvon spectrometer,wavelengths 300-1600nm                                 
  • Ar+ laser 
  • HeCd 325 nm laser                               
  • UV lamp with monochromator                  
  • Oxford optistat cryostat, 4.2-320K                                
  • FTIR: Bruker, Tensor 27

 

Characterization of dielectrics and MIS devices
  • Admittance measurements (1Hz up to 1MHz, 25-150°C) 
  • I-V measurements (2 up to 4-terminal devices, 25-150°C)
  • Charge-to-breakdown measurements                    
  • Bias-Temperature-Stress measurements 
  • Hot-carrier stress measurements                   
  • Bias-Temperature-Stress measurements   
RF measurements up to 40 GHz                      

 

Optical characterization
  • Absorption measurements, wavelength rangeUV-VIS-IR
  • Photoluminescence (PL)                                 
  • Laser excitation: 325 nm, 457.8nm, 488nm, 514.5nm 
  • Spectrometer: 350nm-1600nm         
  • Electroluminescence (EL): 350nm-1600nm  
  • Photocurrent-photovoltage (UV-VIS)   
  • FTIR   
  • Solar cell measurements
Characterization of sensors
  • Gas sensors
  • Flow sensors

 

 
 
MODELLING
 

Main Equipments

Techniques/Competences

  • SILVACO tools for process and device modeling (Athina and Atlas)
  • Coventorware
  • MATLAB-FEMlab
  • HFFS
  • Process and device modeling
  • RF modeling using HFFS